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High Durability IR Photoelectric Sensor IP67 Protection Structure Infrared Light 660nm

    Buy cheap High Durability IR Photoelectric Sensor IP67 Protection Structure Infrared Light 660nm from wholesalers
     
    Buy cheap High Durability IR Photoelectric Sensor IP67 Protection Structure Infrared Light 660nm from wholesalers
    • Buy cheap High Durability IR Photoelectric Sensor IP67 Protection Structure Infrared Light 660nm from wholesalers

    High Durability IR Photoelectric Sensor IP67 Protection Structure Infrared Light 660nm

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    Model Number : E3F-DS30Y1
    Price : Negotiable
    Payment Terms : L/C, D/A, D/P, T/T, Western Union, MoneyGram
    Supply Ability : 1000only 8day
    Brand Name : Zhongde
    Certification : CE
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    High Durability IR Photoelectric Sensor IP67 Protection Structure Infrared Light 660nm

    High Durability IR Photoelectric Sensor IP67 Protection Structure Infrared Light 660nm


    Description

    The infrared proximity switch sensor is a reflection-type photoelectric snesor which sends and receives infrared beams.

    Three-wire PNP/NPN normally open AC


    Working principle

    Infrared proximity switches work by sending out beams of invisible infrared light. A photodetector on the proximity switch detects any reflections of this light. These reflections allow infrared proximity switches to determine whether there is an object nearby. When the infrared is able to read back the infrared beams that it sends out, then this means the path of the infrared is impeded, which means there is an object nearby. When the infrared sensor cannot read back the infrared beams it sends out, this means that the path is unimpeded and there is no object in front of the sensor, which is why it cannot read back the infrared beams it is sending out.


    Parameter

    Connect time1.5ms
    Light sourceInfrared light 660nm
    voltageDC : DC 12~24 (6~36V) pulse (p-p) below 10%
    AC : AC 110~220V (36~250V) 50/60Hz
    Current consumptionN.P : ≤13mA
    D : ≤0.8mA
    A : ≤1.7mA
    Control outputN.P : ≤300mA
    D : ≤200mA
    A : ≤400mA
    Loop protectionN.P.D : reverse connection protection, surge absorption, load short circuit protection
    A : surge absorption
    Ambient temperature-30~+65°C (no icing, no condensation)
    Ambient humidity-35~95%RH
    Insulation resistance50MΩ or more (DC500 megohmmeter) (between charging part and housing)
    Withstand voltageAC 1000V 50/60HZ 1min (between charging part and Housing)
    Temperature effect-30~+65°C: detection distance error ±15% at +23°C
    -25~+60°C: detection distance error ±10% at +23°C
    Voltage effect6-36V (90-250V) : ±15% of detection distance error
    10-30V (220V) : ±10% of detection distance error
    Protection levelIP67 (IEC)
    MaterialHousing: ABS
    Detection surface: ABS

    Note:Please read the "Precautions" of the product manual before use.


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